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caution electro-static sensitive devices the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. bipolar analog integrated circuit m m m m pc1686g/gv general purpose 5 v frequency down-converter ic document no. p11100ej4v0ds00 (4th edition) date published october 1999 n cp(k) printed in japan data sheet the mark shows major revised points. 1996, 1999 description the m pc1686 is silicon monolithic ic designed for vhf band receiver applications. this ic consists of double balanced mixer, local oscillator, if amplifier, and voltage regulator. the package is 8-pin sop or ssop suitable for high-density surface mount. features ? vhf/catv band operation ? single-end push-pull if amplifier suppresses fluctuation in output impedance. ? good capability of vhf-varactor diode due to balanced amplifier oscillator ? supply voltage: 5 v ? packaged in 8-pin sop or ssop suitable for high-density mounting applications ? tuners for tv and vcr ? receivers for vhf band ordering information part number package supplying form m pc1686g-e1 8-pin plastic sop (225 mil) embossed tape 12 mm wide. pin 1 indicates pull-out direction of tape. qty 2.5 kp/reel. m pc1686gv-e1 8-pin plastic ssop (175 mil) embossed tape 8 mm wide. pin 1 indicates pull-out direction of tape. qty 1 kp/reel. remark to order evaluation samples, please contact your local nec office. (part number for sample order: m pc1686g, m pc1686gv)
data sheet p11100ej4v0ds00 2 m m m m pc1686g/gv internal block diagram pin configuration (top view) 8765 1234 if pre amp. mix osc osc buffer reg. 1 2 3 4 8 7 6 5 1. 2. 3. 4. 5. 6. 7. 8. osc base (bypass) osc base (feedback) osc collector (coupling) v cc if output (open collector) gnd rf input1 (bypass) rf input2
data sheet p11100ej4v0ds00 3 m m m m pc1686g/gv pin explanation pin no. symbol function and explanation equivalent circuit 1 osc base (bypass) internal oscillator consists in balance amplifier. 2 pin and 3 pin should be externally equiped with tank resonater circuit in order to oscillate with feedback loop. 2 osc base (feedback) 1 pin should be grounded through approximate 10 pf coupling capacitor. 3osc collector (coupling) v cc v ref amp. 3 1 2 to osc buffer 4v cc supply voltage pin for the ic. 5 if output if output pin. if amplifier is designed as single- end push-pull amplifier. this pin is assigned for the emitter follower output with 50 w constant resistive impedance in wide band. v cc 5 if output from if pre amp. 6 gnd gnd pin for the ic. 7 rf input 1 (bypass) 7 pin and 8 pin are inputs for mixer designed as double balanced type. either pin can be assigned for input and another for ground. 8 rf input 2 v cc ? ? ? rf input from osc buffer ? ? ? to if amp. 3 pin is defined as open collector. this pin should be coupled through resistor or chock coil in order to adjust q and be supplied voltage. in case of abnormal oscillation, adjust its q lower to stabilize the operation.
data sheet p11100ej4v0ds00 4 m m m m pc1686g/gv absolute maximum ratings parameter symbol conditions rating unit supply voltage v cc t a = +25 c 6.0 v power dissipation p d t a = +85 c note 250 mw operating ambient temperature t a - 40 to + 85 c storage temperature t stg - 65 to + 150 c note mounted on 50 50 1.6-mm epoxy glass pwb, with copper patterning on both sides. recommended operating range parameter symbol min. typ. max. unit supply voltage v cc 4.5 5.0 5.5 v operating ambient temperature t a - 40 + 25 + 85 c electrical characteristics (v cc = 5 v, t a = +25 c) parameter symbol conditions min. typ. max. unit circuit current 1 i cc 1 no input signal note 25 38 48 ma conversion gain 1 cg1 f rf = 55 mhz, f if = 44 mhz, p rf = - 40 dbm, p osc = - 5 dbm note 15 19 22 db conversion gain 2 cg2 f rf = 200 mhz, f if = 50 mhz, p rf = - 40 dbm, p osc = - 5 dbm note 15.5 19.5 22.5 db conversion gain 3 cg3 f rf = 440 mhz, f if = 50 mhz, p rf = - 40 dbm, p osc = - 5 dbm note 16 20 23 db noise figure 1 nf1 f rf = 55 mhz, f if = 44 mhz, p osc = - 5 dbm note - 11 14 db noise figure 2 nf2 f rf = 200 mhz, f if = 50 mhz p osc = - 5 dbm note - 11 14 db noise figure 3 nf3 f rf = 440 mhz, f if = 50 mhz, p osc = - 5 dbm note - 12 15 db maximum output power 1 p o(sat) 1f rf = 55 mhz, f if = 44 mhz, p rf = 0 dbm, p osc = - 5 dbm note -+ 10 - dbm maximum output power 2 p o(sat) 2f rf = 200 mhz, f if = 50 mhz, p rf = 0 dbm, p osc = - 5 dbm note -+ 10 - dbm maximum output power 3 p o(sat) 3f rf = 440 mhz, f if = 50 mhz, p rf = 0 dbm, p osc = - 5 dbm note -+ 10 - dbm note by test circuit 1
data sheet p11100ej4v0ds00 5 m m m m pc1686g/gv standard characteristics (for reference) (v cc = 5 v, t a = +25 c unless otherwise specified) parameter symbol conditions reference values unit oscillation frequency stability f stb v cc = 10 %, f osc = 100 to 490 mhz note 1 100 khz oscillation frequency drift f drift f osc = 100 to 490 mhz, 30 min note 1 100 khz oscillation start voltage v osc f osc = 100 to 490 mhz note 1 3.0 v 1 % cross-modulation distortion 1 cm1 f rf = 55 mhz, f if = 44 mhz note 2, 3 94 db m 1 % cross-modulation distortion 2 cm2 f rf = 200 mhz, f if = 50 mhz note 2, 3 94 db m 1 % cross-modulation distortion 3 cm3 f rf = 440 mhz, f if = 50 mhz note 2, 3 94 db m notes 1. by test circuit 2 2. by test circuit 1 3. f undes = f rf 12 mhz, p rf = - 31 dbm, p osc = - 5 dbm am: 100 khz, 30 % mod., s/i ratio = 46 dbc, output 75 w open
data sheet p11100ej4v0ds00 6 m m m m pc1686g/gv typical characteristics (t a = +25 c) 50 40 30 20 10 0 123456 no input signal circuit current vs. supply voltage circuit current i cc (ma) supply voltage v cc (v) 16 14 12 10 8 6 4 0 5 10 15 20 25 500 1 000 1 200 noise figure and conversion gain vs. input frequency input frequency f rf (mhz) cg nf conversion gain cg (db) noise figure nf (db) v cc = 5 v, f if = 50mhz, rf input terminal : non tuned p rf = ?0 dbm, p osc = ? dbm
data sheet p11100ej4v0ds00 7 m m m m pc1686g/gv 25 20 15 10 5 55 200 500 conversion gain vs. input frequency 0 60 70 80 90 500 1000 1200 1 % cross-modulation distortion vs. input frequency input frequency f rf (mhz) 1 % cross-modulation distortion cm (db ) v cc = 5 v fundes = f rf 12 mhz p rf = ?1 dbm f if = 50 mhz p osc = ? dbm am: 100 khz, 30 % mod. s/i ratio = 46 dbc output port: 75 w open 30 900 0 input frequency f rf (mhz) v cc = 5 v f if = 50 mhz p rf = ?0 dbm p osc = ? dbm rf input terminal: tuned conversion gain cg (db) m 100
data sheet p11100ej4v0ds00 8 m m m m pc1686g/gv ?0 0 +20 ?0 0 +30 p out im 3 v cc = 5 v f if = 50 mh z f rf = 440 mh z p osc = ? dbm input power p in (dbm) output power p out (dbm) 0 500 1 000 1 200 ?00 0 +300 v cc ?0 % v cc +10 % v cc ?0 % v cc ?0 % v cc 10 % osc-frequency stability vs. osc-frequency oscillation frequency f osc (mhz) oscillation frequency stability f stb (kh z ) output power vs. input power
data sheet p11100ej4v0ds00 9 m m m m pc1686g/gv test circuit 1 v cc 47 w 150 nh 1 000 pf 1 000 pf 4 pf 5 pf 1 000 pf osc input rf input 1 000 pf 1 000 pf if output 4321 5678 test circuit 2 bt 1 000 pf osc 47 k w 47 k w 100 pf 47 w 2.2 h m v cc if output 1 000 pf rf input 1 000 pf 1 000 pf 1 000 pf 56 pf 10 pf hvu202 10 w hvu306a 4321 5678 100 mh 2 250 mh 2 520 mh 2 0.4 3.2 12t ff 0.4 3.2 7t ff 0.4 2.8 2t ff 47 k w
data sheet p11100ej4v0ds00 10 m m m m pc1686g/gv application circuit example bt 1 000 pf 47 k w 47 k w 1 000 pf 47 w 2.2 h m v cc if output 1 000 pf rf input 1 000 pf 100 pf 56 pf 10 pf 10 w 47 k w 20 pf 1 000 pf c 1 l 1 l 2 c 1 4 pf l 1 0.4 3.2 3t l 2 0.4 4.0 7t f f f f 2 pf 0.4 3.5 2t 0.5 3.5 2t f f f f rf200 mh z rf500 mh z 43 21 56 78 hvu202 hvu306a
data sheet p11100ej4v0ds00 11 m m m m pc1686g/gv package dimensions 8 pin plastic sop (225 mil) (unit: mm) note each lead centerline is located within 0.12 mm of its true position (t.p.) at maximum material condition. 85 1 4 m detail of lead end 5.2 ? 0.2 1.49 0.85 max. 1.27 0.12 1.57 ? 0.2 0.1 ? 0.1 6.5 ? 0.3 0.6 ? 0.2 1.1 ? 0.2 0.10 4.4 ? 0.15 3? +7? ?? 0.17 +0.08 ?.07 0.42 +0.08 ?.07
data sheet p11100ej4v0ds00 12 m m m m pc1686g/gv 8 pin plastic ssop (175 mil) (unit: mm) note each lead centerline is located within 0.10 mm of its true position (t.p.) at maximum material condition. 85 1 4 m detail of lead end 3.00 max 0.575 max. 0.65 0.10 1.8 max 0.1 ? 0.1 4.94 ? 0.2 1.5 ? 0.1 0.5 ? 0.2 0.87 ? 0.2 0.15 3.2 ? 0.1 3? +7? ?? 0.15 +0.10 ?.05 0.3 +0.10 ?.05
data sheet p11100ej4v0ds00 13 m m m m pc1686g/gv note on correct use (1) observe precautions for handling because of electro-static sensitive devices. (2) form a ground pattern as widely possible to minimize ground impedance (to prevent undesired oscillation). (3) keep the track length of the ground pins as short as possible. (4) connect a bypass capacitor (example: 1 000 pf) to the v cc pin. recommended soldering conditions this product should be soldered under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235 c or below time: 30 seconds or less (at 210 c) count: 3, exposure limit: none note ir35-00-3 vps package peak temperature: 215 c or below time: 40 seconds or less (at 200 c) count: 3, exposure limit: none note vp15-00-3 wave soldering soldering bath temperature: 260 c or below time: 10 seconds or less count: 1, exposure limit: none note ws60-00-1 partial heating pin temperature: 300 c time: 3 seconds or less (per side of device) exposure limit: none note C note after opening the dry pack, keep it in a place below 25 c and 65 % rh for the allowable storage period. caution do not use different soldering methods together (except for partial heating). for details of recommended soldering conditions for surface mounting, refer to information document semiconductor device mounting technology manual (c10535e).
data sheet p11100ej4v0ds00 14 m m m m pc1686g/gv [memo]
data sheet p11100ej4v0ds00 15 m m m m pc1686g/gv [memo]
m m m m pc1686g/gv nesat (nec silicon advanced technology) is a trademark of nec corporation. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. ? no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. ? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. ? descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. ? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ? nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8

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